| AVS 66th International Symposium & Exhibition | |
| Vacuum Technology Division | Tuesday Sessions |
| Session VT-TuA |
| Session: | Advanced Applications of Vacuum Technology |
| Presenter: | Richard Silver, National Institute of Standards and Technology (NIST) |
| Authors: | R.M. Silver, National Institute of Standards and Technology (NIST) X.Q. Wang, National Institute of Standards and Technology (NIST) R.V. Kashid, National Institute of Standards and Technology (NIST) J. Wyrick, National Institute of Standards and Technology (NIST) P. Namboodiri, National Institute of Standards and Technology (NIST) K. Liu, National Institute of Standards and Technology (NIST) M.D. Stewart, National Institute of Standards and Technology (NIST) G. Bryant, National Institute of Standards and Technology (NIST) |
| Correspondent: | Click to Email |
Atomically precise fabrication has an important role to play in developing atom-based electronic devices for use in quantum information processing, quantum materials research and quantum sensing. Atom by atom fabrication has the potential to enable precise control over tunnel coupling, exchange coupling, on-site charging energies, and other key properties of basic devices needed for solid state quantum computing and analog quantum simulation. Using hydrogen-based scanning probe lithography we deterministically place individual dopant atoms with atomically aligned contacts and gates to build single electron transistors and single or few atom transistors.
We have developed robust lithography, device relocation, and contact processes that enable routine electrical measurement of atomically precise devices with an emphasis on minimizing process-induced dopant movement. Our low temperature palladium silicide contact process provides low-resistance ohmic contacts with yield better than 98%. Fabrication at the atomic scale requires exceptional vacuum and sample cleanliness. Our STM and sample preparation vacuum systems operate in the low 1x10-11 torr regime and we are implementing several hardware upgrades to achieve < 10-12 torr vacuum.
This presentation will cover the design, fabrication, and characterization of multiple STM patterned single electron transistors that demonstrate stable coulomb blockade oscillations. We will report measurements of the electronic properties and tunnel coupling in single electron transistors where the tunnel gap is varied at the dimer row scale. Shrinking single electron transistors to the atomic limit, we demonstrate single dopant atom and few dopant cluster devices - essential building blocks in silicon-based donor dot qubits and proposed solid state analog quantum simulators. This presentation will include spectroscopic transport measurements and modeling of atomically precise single and few atom transistors.