AVS 66th International Symposium & Exhibition
    Materials and Processes for Quantum Information, Computing and Science Focus Topic Monday Sessions
       Session QS+EM+MN+NS-MoM

Paper QS+EM+MN+NS-MoM1
Measurement of a Two-Level-System Dipole Distribution in a Nanoscale Aluminum Oxide Barrier

Monday, October 21, 2019, 8:20 am, Room B231-232

Session: High Coherence Qubits for Quantum Computing
Presenter: Chih-Chiao Hung, University of Maryland
Authors: C.-C. Hung, University of Maryland
N. Foroozani, University of Maryland
K. Osborn, University of Maryland
Correspondent: Click to Email

Random atomic-sized material defects, identified as two-level systems (TLS), have garnered wide interest because they cause decoherence in superconducting qubits. TLSs often arise in the nonlinear element, the Josephson junction, which is typically made of amorphous aluminum oxide. This material is a clear concern in qubits due to a substantial loss tangent in bulk: large area JJs. However, detail on the dipole moments of individual TLSs is generally lacking but is fundamental to defect-qubit coupling. We have recently developed a method to study individual dipole moments in thin dielectric films with a quantum regime resonator using an electrical bridge of capacitors. We have now extended this technique to a different material, aluminum oxide, using a smaller nanoscale thicknesses and barrier volume. The geometry of the device allows extraction of the individual dipole moments within the central layer of a superconductor-aluminum oxide-superconductor trilayer. This new study also produced a greater statistical sample of TLS dipoles than previous work. Preliminary analysis allows us to extract a dipole moment distribution with a clear mean value. This information on aluminum oxide can be used in the future modeling of qubits and the future characterization of qubit materials.