| AVS 66th International Symposium & Exhibition | |
| Materials and Processes for Quantum Information, Computing and Science Focus Topic | Tuesday Sessions |
| Session QS+2D+EM+MN+NS-TuA |
| Session: | Materials for Quantum Sciences |
| Presenter: | Kai Xiao, Oak Ridge National Laboratory |
| Authors: | K. Xiao, Oak Ridge National Laboratory X. Li, Oak Ridge National Laboratory K. Wang, Oak Ridge National Laboratory A. Oyedele, Oak Ridge National Laboratory M. Yoon, Oak Ridge National Laboratory S. Xia, Oak Ridge National Laboratory M. Mahjouri-Samani, Oak Ridge National Laboratory C.M. Rouleau, Oak Ridge National Laboratory A.A. Puretzky, Oak Ridge National Laboratory L. Liang, Oak Ridge National Laboratory R.R. Unocic, Oak Ridge National Laboratory D. Geohegan, Oak Ridge National Laboratory |
| Correspondent: | Click to Email |
Two-dimensional (2D) materials are intrinsically heterogeneous, thereforecontrolling defects, understanding the impact of boundaries and interfaces and developing means to exploit these heterogeneities is a transformative opportunity that could underpin future technologies and energy applications. In this talk, I will discuss the fundamental understanding of the roles of heterogeneities including defects, dopants, edges, strain, and phases in 2D materials on their optoelectronic properties. Through isoelectronic doping in monolayer of MoSe2, the Se vacancies are effectively suppressed and photoluminescence is significantly enhanced. In addition, we demonstrate the non-equilibrium, bottom-up growth approach not only can tailor the defect density far beyond intrinsic levels in monolayers of 2D MoSe2−x but also create new antisite defects in monolayers of WS2during the synthesis. The build-in localized strain in 2D crystals directly grown on patterned curved surface can tune the bandgap of 2D crystals for possible quantum emitting applications. The bottom up synthesis of 2D materials discussed here provides excellent control over the heterogeneity in 2D materials, which can modulate the optical and electrical properties in 2D materials and their heterostructures for ultra-thin and flexible electronics.
Acknowledgment: Synthesis science was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences (BES), Materials Sciences and Engineering Division and characterizations were performed at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility.