| AVS 66th International Symposium & Exhibition | |
| Materials and Processes for Quantum Information, Computing and Science Focus Topic | Tuesday Sessions |
| Session QS+2D+EM+MN+NS-TuA |
| Session: | Materials for Quantum Sciences |
| Presenter: | Rachael L. Myers-Ward, U.S. Naval Research Laboratory |
| Authors: | S.P. Pavunny, U.S. Naval Research Laboratory R.L. Myers-Ward, U.S. Naval Research Laboratory D.K. Gaskill, U.S. Naval Research Laboratory E.S. Bielejec, Sandia National Laboratories H.B. Banks, U.S. Naval Research Laboratory A.L. Yeats, U.S. Naval Research Laboratory M.T. DeJarld, Raytheon S.G. Carter, U.S. Naval Research Laboratory |
| Correspondent: | Click to Email |
Silicon carbide has been a material of interest in the quantum technology field for future applications in communication and sensing due in part to the long spin (S = 3/2) coherent lifetime of the Si vacancies (VSi). Additional benefits to using SiC for quantum technologies is wafer scalability and fabrication capability using standard processing techniques, making it a favorable material. To improve emission rates of photoluminescence from the vacancies, exact placement of the VSi within microcavities is necessary. Here we show implanted Li+ into Si-face, 4H-SiC homoepitaxy creates VSi in desired locations. The epitaxial material had no measurable VSi prior to Li+ implantation. The dose of 100 keV Li+ ranged from 1012 – 1015 cm-2 and was directed using a maskless focused ion beam technique with a positional accuracy of ~25 nm. The arrays were characterized with high-resolution scanning confocal fluorescence microscopy. Using a 745 nm excitation source, the photoluminescence ranging from 860 – 975 nm produced the characteristic V1’, V1 and V2 lines, with the V1’ zero-phonon line being consistent for all measurements. In addition, the V1’ intensity showed a linear dependence with implantation dose. Moreover, near single photon emission is obtained from VSi at the lowest doses.
Research at NRL is supported by the Office of Naval Research. Ion implantation was performed at Sandia National Laboratories through the Center for Integrated Nanotechnologies, an Office of Science facility operated for the DOE (contract DE-NA-0003525) by Sandia Corporation, a Honeywell subsidiary.