| AVS 66th International Symposium & Exhibition | |
| Materials and Processes for Quantum Information, Computing and Science Focus Topic | Tuesday Sessions |
| Session QS+2D+EM+MN+NS-TuA |
| Session: | Materials for Quantum Sciences |
| Presenter: | Ryan Waskiewicz, Pennsylvania State University |
| Authors: | R.J. Waskiewicz, Pennsylvania State University B.R. Manning, Pennsylvania State University D.J. McCrory, Pennsylvania State University P.M. Lenahan, Pennsylvania State University |
| Correspondent: | Click to Email |
There is growing interest in the possibilities of SiC in spin-based quantum computation. The development of such spin-based quantum computation will require a fundamental understanding of spin physics of paramagnetic defects in SiC including both electron and nuclear paramagnetism. We utilize electrically detected magnetic resonance (EDMR) detection through spin dependent recombination (SDR). In this study we demonstrate relatively high signal to noise electron nuclear double resonance (ENDOR) in a single fully processed SiC pn junction at room temperature. The electrically detected ENDOR (EDENDOR) involves nitrogen nuclei in close proximity to deep level centers within the depletion region of the pn junction; the deep levels are almost certainly silicon vacancies.
We believe these observations are of importance for at least two reasons: (1) they demonstrate that the enormous analytical power of ENDOR can be extended to the study of problems in conventional solid-state electronics and (2) the results demonstrate a way to directly monitor small numbers of nuclear spins through the measure of electronic currents.
In our EDMR measurements, a slowly varying magnetic field and an oscillating microwave frequency magnetic field are applied to the sample inside a microwave cavity. As in conventional EPR, energy is absorbed by paramagnetic sites when the resonance condition is met. For a simple case, this resonance condition is hv=gμBB±ΣmiAi, where h is Planck’s constant, g is an orientation dependent number typically expressed in a g-tensor, μBis the Bohr magneton, B is the magnetic field, miis the spin quantum number of the ith nucleus, and Ai is the hyperfine interaction of the ith magnetic nucleus. In EDMR, the EPR response is detected through a change in device current, in our case due to SDR.
The devices in this study are 4H-SiC BJTs. The EDMR response obtained on these BJTs is very similar to an EDMR spectrum that has been linked to a silicon vacancy in 4H-SiC MOSFETs. To perform the EDENDOR measurement, the magnetic field is held constant and an NMR frequency sweep is applied to the device. The device current is measured and a large response is measured at what is unambiguously the nuclear frequency of nitrogen. These results demonstrate the analytical power of the EDENDOR measurement, measuring nitrogen in the vicinity of the silicon vacancy defect centers that are measured with EDMR.
This work was supported by the Air Force Office of Scientific Research under award number NO. FA9550-17-1-0242.