Invited Paper QS+2D+EM+MN+NS+VT-WeM3
Quantum Control of Spins in Silicon Carbide with Photons and Phonons

Wednesday, October 23, 2019, 8:40 am, Room B231-232

There are numerous efforts to embrace solid-state defects and construct quantum systems to enable new information technologies based on the quantum nature of the electron. Current studies include semiconductors with incorporated point defects, whose quantum mechanical spin properties allow a fundamentally different means to process information. In particular, interfacing solid-state defect electron spins to other quantum systems is an ongoing challenge. Here we demonstrate electrically driven coherent quantum interference in the optical transition of single divacancies, enabling new control of the spin-photon interface [1]. By applying microwave frequency electric fields, we coherently drive the excited-state orbitals and induce Landau-Zener-Stückelberg interference fringes in the resonant optical absorption spectrum. Furthermore, we develop a stroboscopic X-ray diffraction imaging technique that provides direct imaging and quantitative measurement of local strain at the nanometer scale. In conjunction with the fabrication of surface acoustic wave resonators, we mechanically drive coherent Rabi oscillations between arbitrary ground-state spin levels, including magnetically forbidden spin transitions, allowing for acoustic quantum control of local spins in silicon carbide and the exploration of spin-phonon coupling in the solid state [2]. These properties establish divacancies as strong candidates for quantum communication and hybrid system applications, where simultaneous control over optical and spin degrees of freedom is paramount.

[1] K. C. Miao et al., arxiv: 1905.12780

[2] S. J. Whiteley et al., Nature Phys. 15, 490 (2019)