AVS 66th International Symposium & Exhibition
    Complex Oxides: Fundamental Properties and Applications Focus Topic Wednesday Sessions
       Session OX+EM+MI+SS-WeM

Paper OX+EM+MI+SS-WeM11
Structural and Dielectric Characterization of Epitaxial Entropy-Stabilized Oxide Thin Films

Wednesday, October 23, 2019, 11:20 am, Room A220-221

Session: Electronic and Magnetic Properties of Complex Oxide Surfaces and Interfaces
Presenter: George Kotsonis, Pennsylvania State University
Authors: G.N. Kotsonis, Pennsylvania State University
J.-P. Maria, Pennsylvania State University
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The emergence of entropy-stabilized oxides (ESOs) represents a new paradigm for complex oxide engineering. The large configurational entropy of ESOs facilitates mixing of chemically dissimilar cations in significant proportions. ESO research continues to intensify as the oxide community works toward a thorough understanding of structure-property-synthesis relationships. Due to inherent metastability, high energy, non-equilibrium synthesis techniques are well suited for ESO fabrication. In particular, laser ablation has excelled at producing high quality epitaxial ESO thin films, which provide a platform for fundamental characterization.

We present the growth and characterization of Ba(Ti0.2Sn0.2Zr0.2Hf0.2Nb0.2)O3 and similar Barium-based perovskite structured ESO thin films grown by laser ablation. Crystal structure, surface morphology, and optical properties are characterized by X-ray diffraction, atomic force microscopy, and ellipsometry respectively. Epitaxial thin film capacitor structures were fabricated to characterize the frequency, voltage, and temperature dependence of electrical properties.

By exploiting the entropy-stabilized nature of ESOs, we demonstrate the incorporation of significant amounts of aliovalent cation pairs (e.g. Sc3+Ta5+) in hopes of producing nano-polar regions supporting a dispersive dielectric response similar to relaxor ferroelectrics. Additionally, we explore compositional space in search of a phase boundary between a high-symmetry ESO phase and a lower symmetry end-member. Compositions at such a boundary may exhibit phase instability and enhanced dielectric functionality similar to compositions at or near a morphotropic phase boundary. The compositional degrees of freedom available in ESO systems provide new avenues for property tuning and studying the effects of extreme chemical disorder on dielectric properties.