AVS 66th International Symposium & Exhibition
    Nanometer-scale Science and Technology Division Tuesday Sessions
       Session NS-TuA

Paper NS-TuA10
The Effects of Atomic-Scale Strain Relaxation on the Electronic Properties of Monolayer MoS2

Tuesday, October 22, 2019, 5:20 pm, Room A222

Session: Recent Advances in Nanoscale Probing and Fabrication
Presenter: Daniel Trainer, Argonne National Laboratory
Authors: D. Trainer, Argonne National Laboratory
Y. Zhang, Argonne National Laboratory
F. Bobba, University of Salerno, Italy
X. Xi, Temple University
S-W. Hla, Argonne National Laboratory
M. Iavarone, Temple University
Correspondent: Click to Email
The ability to control nanoscale electronic properties by introducing macroscopic strain is of critical importance for the implementation of two-dimensional (2D) materials into flexible electronics and next-generation strain engineering devices. In this work, we correlate the atomic-scale lattice deformation with a systematic macroscopic bending of monolayer molybdenum disulfide films by using scanning tunneling microscopy and spectroscopy implemented with a custom-built sample holder to control the strain. Using this technique, we are able to induce strains of up to 3% before slipping effects take place and relaxation mechanisms prevail. We find a reduction of the quasiparticle bandgap of about 400 meV per percent local strain measured with a minimum gap of 1.2 eV. Furthermore, unintentional nanoscale strain relaxation of van der Waals monolayer sheets can negatively impact strain engineered device performance. Here we investigate such strain relaxation mechanisms that include one-dimensional ripples and 2D wrinkles which alter the spatial electronic density of states and strain distribution on the atomic scale.