| AVS 66th International Symposium & Exhibition | |
| Magnetic Interfaces and Nanostructures Division | Thursday Sessions |
| Session MI-ThP |
| Session: | Magnetic Interfaces and Nanostructures Poster Session |
| Presenter: | Aaron Mosey, Indiana University-Purdue University Indianapolis |
| Authors: | A. Mosey, Indiana University-Purdue University Indianapolis G. Hao, University of Nebraska-Lincoln A.T. N'Diaye, Lawrence Berkeley National Laboratory A.S. Dale, Indiana University-Purdue University Indianapolis U. Manna, Illinois State University P.A. Dowben, University of Nebraska-Lincoln R. Cheng, Indiana University-Purdue University Indianapolis |
| Correspondent: | Click to Email |
The scale of new micro and nano magneto-electronic devices is bounded by thermal and quantum constraints as predicted by Moore’s Relation. This necessitates a push into the limits of harnessable natural phenomena to facilitate a post-Moore’s era of design. Thermodynamic stability at room temperature, fast (Ghz) switching, and low energy cost narrow the list of candidates. Molecular electronic frontier orbital structure of Fe ions in octahedral fields will split in response to the local energetic environment, giving rise to the eg and t2g suborbitals. The energetic scale between these two orbitals as a result of this deformation yields a low spin diamagnetic state or an S=2 high spin paramagnetic state. Spin crossover complex [Fe(II)(H2B(pyz)2(bipy))2] will show locking of its spin state well above the transition temperature, with an accompanied change of conductivity, when placed in a polar environment. Here we show voltage controllable, room temperature, stable locking of the spin state, and the corresponding conductivity change, when molecular thin films of [Fe(II)(H2B(pyz)2(bipy))2] are deposited on a ferroelectric polyvinylidene fluoride hexafluropropylene substrate. This opens the door to the creation of a thermodynamically stable, room temperature, multiferroic gated voltage device.