| AVS 66th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Photonics Poster Session |
| Presenter: | Sakal Pech, Chosun University, Republic of Korea |
| Authors: | Y.-K. Jun, EM Co., Inc., Republic of Korea S. Pech, Chosun University, Republic of Korea M.H. Yoo, Chosun University, Republic of Korea G.-B. Cho, Chosun University, Republic of Korea N.-H. Kim, Chosun University, Republic of Korea |
| Correspondent: | Click to Email |
ZnS is one of the attractive II-VI semiconductors because of their potential applications in the novel electronics and optoelectronics devices. ZnS is an n-type semiconductor with relatively high transparency, large Bohr exciton radius (2.5 nm), large exciton binding energy (40 meV), high index of refraction (2.27) [1], and wide bandgap showing different bandgaps of 3.68 eV and 3.91 eV for cubic zinc blende (ZB) phase and hexagonal wurtzite (WZ) phase, respectively [2]. ZnS is considered one of the prospective candidates for the CIGS photovoltaic (PV) applications, compared to CdS, it has non-toxic handling, wide bandgap, and better lattice matching to CIGS absorber with bandgaps of 1.3–1.5 eV [2]. Some dopant metals, such as Al, Cu, Ag, Mn, and Tb, are widely doped into ZnS lattice. Some researchers have studied the effect of Cu doping on the emission of light in ZnS, in this study, ZnS:Cu thin films were deposited by using a co-puttering method for photovoltaic applications. Effect of doping content on morphological, optical and electrical properties of ZnS thin films after rapid thermal annealing (RTA) treatment was investigated with the structural properties of the different phases of ZB, WZ, and the mixture of them in X-ray diffraction studies . Optical and electrical characteristics of the thin films were analyzed by using an UV-Visible spectrophotometer and a Hall effect measurement system for optical transmittance, bandgap, resistivity, and carrier concentration. Acknowledgement: This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20184010201650). [1] Sanjeev Kumar, C.L. Chen, C.L. Dong, Y.K. Ho, J.F. Lee, T.S. Chan, R. Thangavel, T.K. Chen, B.H. Mok, S.M. Rao, M.K. Wub, Room temperature ferromagnetism in Ni doped ZnS nanoparticles, J. Alloy Compd. 554, 357 (2013). [2] Md. Anisuzzaman Shakil, Sangita Das, Md. Ashiqur Rahman, Umma Salma Akther, Md. Kamrul Hassan Majumdar, Md. Khalilur Rahman, A Review on Zinc Sulphide Thin Film Fabrication for Various Applications Based on Doping Elements, Mater. Sci. Appl. 9, 751 (2018).