AVS 66th International Symposium & Exhibition
    Electronic Materials and Photonics Division Thursday Sessions
       Session EM-ThP

Paper EM-ThP6
Toward Selective Deposition of Boron Carbide Layers

Thursday, October 24, 2019, 6:30 pm, Room Union Station B

Session: Electronic Materials and Photonics Poster Session
Presenter: Raja Sekhar Bale, University of Missouri-Kansas City
Authors: R. Bale, University of Missouri-Kansas City
R. Thapa, University of Missouri-Kansas City
L. Dorsett, University of Missouri-Kansas City
S. Wagner, University of Missouri-Kansas City
D. Bailey, University of Missouri-Kansas City
A.N. Caruso, University of Missouri-Kansas City
J.D. Bielefeld, Intel Corporation
S.W. King, Intel Corporation
M.M. Paquette, University of Missouri-Kansas City
Correspondent: Click to Email
The semiconductor industry is pushing its boundaries in device scaling technology by way of novel processing methods and increasingly complex patterning schemes. This requires a variety of functional and patterning-assist materials as well as advanced deposition techniques. For years, Si-based materials have been used to meet these needs; however, these alone cannot fulfill the range of material requirements moving forward. Boron carbide has shown promise due to compelling dielectric, thermal, mechanical, chemical, and etch properties. Toward applying this material to next-generation integration schemes, we have been exploring the potential of going beyond traditional growth processes (e.g., plasma-enhanced chemical vapor deposition) and investigating innovative area-selective atomic layer deposition (AS-ALD) strategies. Herein we explore schemes for the selective metal/dielectric deposition of boron carbide using layer-by-layer methods. X-ray photoemission spectroscopy (XPS) and atomic force microscopy (AFM) techniques are employed for characterization and imaging of the resulting surfaces.