| AVS 66th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Monday Sessions |
| Session EM+PS+TF-MoA |
| Session: | New Devices and Materials for Logic and Memory |
| Presenter: | Mengwei Si, Purdue University |
| Authors: | M. Si, Purdue University P. Ye, Purdue University |
| Correspondent: | Click to Email |
Ferroelectric (FE) hafnium oxides (HfO2) such as hafnium zirconium oxide (HZO) is the promising thin film ferroelectric material for non-volatile memory applications. The ultrafast measurements of polarization switching dynamics on ferroelectric (FE) and anti-ferroelectric (AFE) hafnium zirconium oxide (HZO) are studied, with the shortest electrical pulse width down to as low as 100 ps. The transient current during the polarization switching process is probed directly. The switching time is determined to be as fast as 10 ns to reach fully switched polarization with characteristic switching time of 5.4 ns for 15 nm thick FE HZO and 4.5 ns for 15 nm thick AFE HZO by Kolmogorov−Avrami−Ishibashi (KAI) model. The limitation by parasitic effect on capacitor charging is found to be critical in the correct and accurate measurements of intrinsic polarization switching speed of HZO. The work is in close collaborations with Xiao Lyu, Wonil Chung, Pragya R. Shrestha, Jason P. Campbell, Kin P. Cheung, Haiyan Wang, Mike A. Capano and was in part supported by SRC and DARPA.