AVS 66th International Symposium & Exhibition | |
Applied Surface Science Division | Thursday Sessions |
Session AS-ThA |
Session: | Role of Surfaces and Interfaces in Energy Material and Industrial Problems |
Presenter: | Alexandra Koziel, Case Western Reserve University |
Authors: | A.C. Koziel, Case Western Reserve University K.A. Montiel, Case Western Reserve University L.G. Wilson, Case Western Reserve University J.L.W. Carter, Case Western Reserve University I.T. Martin, Case Western Reserve University |
Correspondent: | Click to Email |
This work details the effect of underlying layers on the growth of CsGeI3, a novel all-inorganic perovskite absorber. The hole-transport layer (HTL) and the underlying substrate were systematically varied. Surface and bulk properties of the film stack were characterized at every growth step. The choice of HTL affects the absorber film morphology, and resulting device efficiency. Further, this approach reveals that the choice of substrate can affect the properties of layers through the entire device.
Two common HTLs, PEDOT:PSS and MoO3, were deposited on substrates with differing surfaces. Glass, ITO (indium tin oxide, a common thin film solar cell transparent electrode), and Si substrates were selected to explore how a range of surface structures, from amorphous to polycrystalline to crystalline, affects the subsequent layers. The vapor-deposited MoO3 was further modified with gas-phase treatments (UV-ozone and O2 plasma exposure) and small molecules (silanization). Specifically, an IPTMS ((3-iodopropyl) trimethoxysilane) silanization procedure was developed to produce an iodine-terminated surface, for improved adhesion of the CsGeI3 absorber layer. A suite of materials characterization methods were applied to the samples after each step of device fabrication to assess the evolution of morphology and composition. Bulk, surface, and interface characteristics were probed using UV-Vis absorption measurements, X-ray photoelectron spectroscopy, scanning electron microscopy, optical profilometry, and spectroscopic ellipsometry. Notably, the absorber film morphology and ultimately the stability of the film stack is sensitive to not only the HTL, but the nature of the material under the HTL (ITO vs. glass), demonstrating the influence of surface/interface properties across multiple layers in a device.