| AVS 66th International Symposium & Exhibition | |
| 2D Materials | Wednesday Sessions |
| Session 2D+EM+MN+NS-WeA |
| Session: | 2D Device Physics and Applications |
| Presenter: | Benfdila Arezki, University M. Mammeri Tizi-Ouzou, Algeria |
| Correspondent: | Click to Email |
Graphene transistors are considered to be the successor’s basic element for the next generation of advanced integrated circuits. However, graphene material suffers from the absence of bandgap to behave as semiconductor. The present paper deals with the investigation on the bandgap engineering approach aiming an increase of the switching characteristics of the graphene transistors.
The main obstacle for graphene transistor is the material zero bandgap that worsens the switching characteristics of the GFETs. Several techniques have been proposed to open a bandgap in graphene, among these engineering techniques, we can cite the Substrate induced bandgap, Bandgap engineering using h-BN/Ni (111). It is known that in theory a maximum of 0.50 to 0.53 eV can be obtained. Such bandgaps are observed on Graphene Bi-Layer (GBL) sheets grown on silicon carbide (SiC).
Other methods are the substitutional doping (SD), Nitrogen doping (NB). In any case graphene engineering should be considered in chemistry and physics view points. A high selective hydrogenation of graphene grown by lithography under the form of nanoruban showed a very interesting result of 0.7 eV. This process is part of selective chemical graphene functionalization techniques (SCGF).
In this paper we will deal with the graphene nanoruban and the opening of a bandgap capable of inducing an appreciable switching current ratio of at least ION/IOFF>106.
The Graphene Nano Ribbon (GNR) structure used in the form of GNRFET for logic circuits and RF devices combines the high field, high mobility and the possibility of opening a bandgap. The higher carrier mobility of graphene is the basis of all electrical characteristics of graphene transistors.
In this paper we have used a semi-classical device model including the band to band tunneling that is described in Ref8 to emphasize on the bandgap engineering. Device performances are studied based on the current-voltage characteristics with respective bandgap width variations. IOFF current estimated and the performance ratio deduced.