Invited Paper 2D+EM+MN+NS-WeA1
Monolayer Electronics and Optoelectronics - Advances, Opportunities and Challenges

Wednesday, October 23, 2019, 2:20 pm, Room A216

Two-dimensional semiconductors exhibit excellent device characteristics, as well as novel optical, electrical, and optoelectronic characteristics. In this talk, I will present our recent advancements in surface passivation, contact engineering, surface charge transfer doping, and heterostructure devices of layered chalcogenides. We have developed a passivation technique that allows for observation of near-unity photoluminescence quantum yield in monolayer semiconductors. I will discuss the mechanism by which non-radiative recombination can be fully removed in monolayers. The work presents the first demonstration of an optoelectronically perfect monolayer, and highlights one of their unique properties. Finally, I will discuss an AC carrier injection mechanism to enable bright light emitting devices using monolayers, overcoming the problem of Schottky contacts.