| AVS 66th International Symposium & Exhibition | |
| 2D Materials | Tuesday Sessions |
| Session 2D+EM+MI+NS-TuA |
| Session: | Properties of 2D Materials including Electronic, Magnetic, Mechanical, Optical, and Thermal Properties II |
| Presenter: | Shyama Rath, University of Delhi, India |
| Authors: | S. Rath, University of Delhi, India V. Singh, University of Delhi, India |
| Correspondent: | Click to Email |
Monolayer MoSe2 was grown on insulating SiO2/Si substrates by chemical vapor deposition. Scanning electron microscopy and optical contrast images were used to determine the domain size, morphology, and the number of layers. The crystallinity, and thickness of the synthesized domains were determined by Raman spectroscopy. The band gap was determined from Photoluminescence (PL) spectroscopy. The PL emission was absent for more than 4 layers, and the peak position varied from 1.48 eV for 4 layers to 1.55 eV in the monolayer limit. Sulphur incorporation was done to obtain MoSxSe2-x so as to obtain a further tunability of the bandgap. The band gap changes from 1.55 eV for monlayer MoSe2 to 1.64 eV for monolayer MoS0.32Se0.68. Further, larger area domains were achieved in the alloy as compared to binary. The thermal conductivity of the monolayer MoSe2 and MoSxSe2-x were determined from temperature-dependant Raman spectroscopy.