AVS 66th International Symposium & Exhibition
    2D Materials Monday Sessions
       Session 2D+EM+MI+NS-MoM

Invited Paper 2D+EM+MI+NS-MoM8
Engineering Interfaces in the Atomically-Thin Limit

Monday, October 21, 2019, 10:40 am, Room A216

Session: Properties of 2D Materials including Electronic, Magnetic, Mechanical, Optical, and Thermal Properties I
Presenter: Deep Jariwala, University of Pennsylvania
Correspondent: Click to Email

The isolation of a growing number of two-dimensional (2D) materials has inspired worldwide efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. While a tremendous amount of research activity has occurred in assembling disparate 2D materials into “all-2D” van der Waals heterostructures, this concept is not limited to 2D materials alone. Given that any passivated, dangling bond-free surface will interact with another via vdW forces, the vdW heterostructure concept can be extended to include the integration of 2D materials with non-2D materials that adhere primarily through noncovalent interactions. I will present our work on emerging mixed-dimensional (2D + nD, where n is 0, 1 or 3) heterostructure devices. Two distinct examples of gate-tunable p-n heterojunctions with anti-ambipolar field efect will be presented. The anti-ambipolar field effect observed in the above systems is also shown generalized to other semiconducting heterojunction systems and extended over large areas with practical applications in wireless communication circuits. Recent work on high performance 2D/3D triodes will also be presented.

The second part of talk will focus on engineering interfaces on photovoltaic devices from 2D semiconductors such as transition metal dichalcogenides (TMDCs).High efficiency inorganic photovoltaic materials (e.g., Si, GaAs and GaInP) can achieve maximum above-bandgap absorption as well as carrier-selective charge collection at the cell operating point. Experimental demonstration of light confinement in ultrathin (< 15 nm) Van der Waals semiconductors (MoS2, WS2 and WSe2) leading to nearly perfect absorption will be demonstrated concurrently with record high quantum efficiencies. Ongoing work on addressing the key remaining challenges for application of 2D materials and their heterostructures in high efficiency photovoltaics which entails engineering of interfaces and open-circuit voltage will be presented in addition to on going work on probing of buried metal/semiconductor interfaces with sub 50 nm resolutions as well as near field luminescence spectroscopy. I will conclude by giving a broad perspective of future work on 2D materials from fundamental science to applications.