AVS 66th International Symposium & Exhibition
    2D Materials Thursday Sessions
       Session 2D+EM+MI+NS+QS+SS-ThM

Paper 2D+EM+MI+NS+QS+SS-ThM6
Kagome-type Lattice Instability and Insulator-metal Transition in an Alkali-doped Mott Insulator on Si(111)

Thursday, October 24, 2019, 9:40 am, Room A216

Session: Dopants, Defects, and Interfaces in 2D Materials
Presenter: Tyler Smith, University of Tennessee Knoxville
Authors: S. Smith, University of Tennessee Knoxville
H. Weitering, University of Tennessee Knoxville
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The 1/3 ML monolayer (ML) ‘alpha phase’ of Sn on Si(111) is a remarkable platform for the study of strong correlations in a spin ½ triangular adatom lattice. In this work, we employ an adatom doping scheme by depositing potassium onto the triangular Sn lattice. The K-atoms destabilize the parent Mott insulating phase and produce a charge-ordered insulator, revealing a rare Kagome lattice at the surface. Scanning Tunneling Microscopy and Spectroscopy reveal a phase transition from an insulating kagome lattice to a metallic triangular lattice at about 200 K. DFT band structure calculations for this kagome system [J. Ortega et al., unpublished] reveal the presence of a flat-band just below the Fermi level, making this novel system a compelling platform for hole-doping studies of magnetic and/or superconducting instabilities.