| AVS 66th International Symposium & Exhibition | |
| 2D Materials | Thursday Sessions |
| Session 2D+EM+MI+NS+QS+SS-ThM |
| Session: | Dopants, Defects, and Interfaces in 2D Materials |
| Presenter: | Gregory Jensen, Nanoscale and Quantum Phenomena Institute |
| Authors: | T.E. Wickramasinghe, Nanoscale and Quantum Phenomena Institute G. Jensen, Nanoscale and Quantum Phenomena Institute R. Thorat, Nanoscale and Quantum Phenomena Institute S.H. Aleithan, Nanoscale and Quantum Phenomena Institute, Saudi Arabia S. Khadka, Nanoscale and Quantum Phenomena Institute E. Stinaff, Nanoscale and Quantum Phenomena Institute |
| Correspondent: | Click to Email |
A chemical vapor deposition (CVD) growth model will be presented for a technique resulting in naturally formed 2D transition metal dichalcogenide (TMD) based metal-oxide-semiconductor structures. The process is based on a standard CVD reaction involving a chalcogen and transition metal oxide-based precursor. Here however, a thin metal oxide layer, formed on lithographically defined regions of a pure bulk transition metal, serves as the precursor. X-ray diffraction and cross -sectional SEM studies show insight into the type and thickness of the metal oxide created during optimal growth conditions. The chalcogen reacts with the metal oxide, forming TMD material which migrates outward along the substrate, leading to lateral growth of highly-crystalline, mono-to-few layer, films. In addition to displaying strong luminescence, monolayer Raman signatures, and relatively large crystal domains, the material grows deterministically and selectively over large regions and remains connected to the bulk metallic patterns, offering a scalable path for producing as-grown two-dimensional materials-based devices.