AVS 66th International Symposium & Exhibition
    2D Materials Thursday Sessions
       Session 2D+EM+MI+NS+QS+SS-ThM

Paper 2D+EM+MI+NS+QS+SS-ThM11
Atomically Resolved Electronic Properties of Defects in the in-plane Anisotropic Lattice of ReS2

Thursday, October 24, 2019, 11:20 am, Room A216

Session: Dopants, Defects, and Interfaces in 2D Materials
Presenter: Adina Luican-Mayer, University of Ottawa, Canada
Correspondent: Click to Email
Among the layered transition metal dichalcogenides, the compounds that exhibit in-plane anisotropy are of particular interest as they offer an additional tuning knob for their novel properties. In this talk, we present experimental evidence of the lattice structure and properties of semiconducting ReS2 by using scanning tunneling microscopy and spectroscopy (STM/STS). We demonstrate that rhenium atoms form diamond-shaped clusters, organized in disjointed chains and characterize the semiconducting electronic band gap by STS. When imaging the surface of ReS2, we encounter “bright” or “dark” regions indicating the presence of charged defects that will electrostatically interact with their environment. By spatially mapping the local density of states around these defects, we explore their origin and electrostatic nature. Experimental results are compared with ab-initio theory.