Paper 2D+EM+MI+MN+NS+QS-WeM3
2D Ferroelectric Semiconductor α-In₂Se₃ for Non-Volatile Memory Applications

Wednesday, October 23, 2019, 8:40 am, Room A226

α-In₂Se₃ is a novel two-dimensional (2D) ferroelectric semiconductor. It has a bandgap of ~1.39 eV, room temperature ferroelectricity, the ability to maintain ferroelectricity down to a few atomic layers and the feasibility for large-area growth. Based on the ferroelectric and semiconducting nature of the material, a ferroelectric semiconductor field-effect transistor (FeS-FET) was proposed and experimentally demonstrated [1]. In the FeS-FET, a ferroelectric semiconductor is employed as the channel material while the gate insulator is the dielectric. The two non-volatile polarization states in FeS-FETs exist in the ferroelectric semiconductor channel. Therefore, a high quality amorphous gate insulator can be used instead of the common polycrystalline ferroelectric insulator for Fe-FETs. The fabricated FeS-FETs exhibit high performance with a large memory window, a high on/off ratio over 10⁸, a maximum on-current of 862 μA/μm, low supply voltage with scaled gate insulator and the potential to exceed the existing Fe-FETs for non-volatile memory applications.

[1] M. Si, S. Gao, G. Qiu, J. Qin, Y. Duan, J. Jian, H. Wang, W. Wu, and P. D. Ye, “A Ferroelectric Semiconductor Field-Effect Transistor,”, arXiv:1812.02933.