AVS 66th International Symposium & Exhibition
    2D Materials Wednesday Sessions
       Session 2D+EM+MI+MN+NS+QS-WeM

Invited Paper 2D+EM+MI+MN+NS+QS-WeM12
Rotationally Controlled van der Waals Heterostructures of 2D Materials

Wednesday, October 23, 2019, 11:40 am, Room A226

Session: Novel 2D Materials
Presenter: Emanuel Tutuc, The University of Texas at Austin
Authors: E. Tutuc, The University of Texas at Austin
K. Kim, The University of Texas at Austin
G.W. Burg, The University of Texas at Austin
H.C.P. Movva, The University of Texas at Austin
Correspondent: Click to Email

Heterostructures of atomic layers such as graphene, hexagonal boron-nitride, and transition metal dichalcogenides (TMDs) can serve as testbed for novel quantum phenomena in two-dimensions, and potential device applications. A key ingredient that can add a new dimension to the atomic layer heterostructures palette is the rotational control, and alignment of different two-dimensional (2D) layers. We review here an experimental technique that enables rotationally controlled heterostructures with accurate alignment of the individual layer crystal axes [1]. We illustrate the applicability of this technique to the rotationally aligned double layers of graphene [2], or TMDs [3] separated by a tunnel barrier which display resonant, energy- and momentum-conserving tunneling in vertical transport, consistent with theoretical expectations. When two 2D layers are overlaid with a relative twist, the resulting heterostructure shows a new type of periodicity associated with the moiré superlattice, which are only beginning to be systematically investigated as platform for strongly correlated electron physics. We discuss the electron transport in tunable moiré patterns realized in twisted bilayer [4], and double bilayer graphene heterostructures.

Work done in collaboration with S. K. Banerjee, L. F, Register, B. J. LeRoy, A. H. MacDonald, T. Taniguchi, and K. Watanabe.

[1] K. Kim et al., Nano Lett. 16, 1989 (2016);

[2] G. W. Burg et al., Nano Lett. 17, 3919 (2017); G. W. Burg et al., Phys. Rev. Lett. 120, 177702 (2018).

[3] K. Kim et al., Nano Lett. 18, 5967 (2018).

[4] K. Kim et al., Proc. Natl. Acad. Sci. USA 114, 3364 (2017).