AVS 66th International Symposium & Exhibition | |
2D Materials | Tuesday Sessions |
Session 2D+EM+MI+MN+NS+QS-TuM |
Session: | Novel Quantum Phenomena |
Presenter: | Tiancong Zhu, The Ohio State University |
Authors: | T. Zhu, The Ohio State University D. O'Hara, University of California, Riverside J.J. Repicky, The Ohio State University S. Yu, The Ohio State University M. Zhu, The Ohio State University B.A. Noesges, The Ohio State University T. Liu, The Ohio State University M. Brenner, The Ohio State University L.J. Brillson, The Ohio State University J. Hwang, The Ohio State University F.Y. Yang, The Ohio State University J.A. Gupta, The Ohio State University R. Kawakami, The Ohio State University |
Correspondent: | Click to Email |
Integrating two-dimensional(2D) magnet with topological insulator is an exciting topic. Other than the possible proximity induced magnetic ordering inside topological insulator, the 2D magnet/ topological insulator heterostructure can also lead to more efficient spin orbit torque switching, or the formation of magnetic skyrmions. The recent discovery of room temperature ferromagnetic ordering in 2D material MnSe and VSe further brings more potential in such heterostructure systems. In this talk, we report the synthesis and characterization of 2D magnet 1T-MnSe on topological insulator Bi Se . Monolayer of MnSe is grown on Bi Se with molecular beam epitaxy, and subsequently characterized with various techniques, including X-ray diffractometry (XRD), X-ray photoemission spectroscopy (XPS) and scanning tunneling microscopy (STM). STM measurement reveals the co-existence of monolayer a-MnSe(111) and 1T-MnSe2 on Bi2Se3 surface. By performing spin-polarized STM measurement with Cr tip, we observed directly the magnetic signal from 1T-MnSe2 on Bi2Se3. The growth of 1T-MnSe2 on Bi2Se3 further leads to the MBE synthesis of magnetic topological insulator Bi2MnSe4, which also shows ferromagnetism down to the monolayer limit. The structural and magnetic characterization of the material will also be discussed in this talk.