AVS 66th International Symposium & Exhibition
    2D Materials Wednesday Sessions
       Session 2D+AS+MI+NS-WeM

Paper 2D+AS+MI+NS-WeM6
Atomic Manipulation of Defects in the Layered Semiconductor 2H-MoTe2

Wednesday, October 23, 2019, 9:40 am, Room A216

Session: 2D Materials Characterization by Scanning Probe Microscopy and Spectroscopy
Presenter: Sara Mueller, The Ohio State University
Authors: S.M. Mueller, The Ohio State University
S. Deng, The Ohio State University
B. St. Laurent, University of New Hampshire
Y. Wang, The Ohio State University
W. Windl, The Ohio State University
S. Hollen, University of New Hampshire
J.A. Gupta, The Ohio State University
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Here we present a charge control of native defects in the bulk transition metal dichalcogenide, MoTe2 by scanning tunneling microscopy (STM). Bulk MoTe2 was cleaved at room temperature in ultrahigh vacuum and imaged with a cut PtIr tip at 9K. Native defects in the MoTe2 are present throughout the sample and image with complex structure. In topographic imaging, the long-range protrusion of a bright defect indicates the species is charged and we image the defects at different depths below the surface. They present with an ionization feature in tunneling spectroscopic mapping which indicates that the charge state of this defect can be manipulated by the band bending caused by the tip. Voltage pulses from the tip migrate the subsurface defects to the surface layer. The migrated defects present with the same spectroscopic signature as native surface defects. We also present DFT results that we use to clarify the identification of these native defects and energy barriers for migration between layers of 2H-MoTe2.