AVS 66th International Symposium & Exhibition
    2D Materials Wednesday Sessions
       Session 2D+AS+MI+NS-WeM

Paper 2D+AS+MI+NS-WeM13
Localized Strain Effects in Spin-Polarized Density of States for 2D-MnGaN – a Room Temperature Ferromagnetic Monolayer

Wednesday, October 23, 2019, 12:00 pm, Room A216

Session: 2D Materials Characterization by Scanning Probe Microscopy and Spectroscopy
Presenter: Arthur Smith, Ohio University
Authors: Y. Ma, Ohio University
K. Meng, The Ohio State University
D. Hunt, CAC-CNEA, Argentina
MA. Barral, CAC-CNEA, Argentina
V. Ferrari, CAC-CNEA, Argentina
F.Y. Yang, The Ohio State University
A.R. Smith, Ohio University
Correspondent: Click to Email

We recently demonstrated the first observation of a 2D room-temperature-ferromagnetic monolayer of MnGaN (2D-MnGaN) using spin-polarized scanning tunneling microscopy and spectroscopy. The sample is grown by molecular beam epitaxy on gallium nitride substrates. We resolved ferromagnetic domains using SP-STM, demonstrated magnetic hysteresis using small out-of-plane magnetic fields, observed magnetic rim states, and measured magnetic DOS profiles using tunneling spectroscopy which are in excellent agreement with the predicted spin-polarized & spin-split DOS peaks obtained from first-principles theory. This work was published online in December 2017 in Nano Letters.[1]

More recently, we are investigating the dependence of magnetization anisotropy on in-plane lattice strain. First of all, we have observed from the spectroscopy measurements that the position of the spin-polarized Mn DOS peak varies from spectrum to spectrum, ranging from -1.69 eV up to -1.22 eV (relative to E_Fermi). In order to investigate if these variations could be related to structural variations, we have also carried out theoretical calculations based on first principles for both isotropic and local anisotropic lattice strains. The isotropic strain case shows that the occupied-states Mn peak can indeed shift by many tenths of an eV if the 2D-MnGaN is strained in-plane; for example, E = -1.58 eV for the no-strain case, whereas E = -1.33 eV for tensile strain (+9.1%) and E = -2.22 eV for compressive strain (-6.0%). On the other hand, we find an opposite behavior in the local anisotropic calculation.

Using atomic resolution STM, we have also found that significant strain variations exist within the 2D-MnGaN. As compared to an ideally periodic hexagonal lattice, the 2D-MnGaN lattice displays local spacing variations, and the spacing distribution is highly non-Gaussian and may instead be characterized as tri-modal with the central peak matching closely the expected average for 2D-MnGaN of 5.52 Å, but with left and right peaks centered around 5.00 Å and 5.92 Å. Therefore, the Mn atoms, centered between Ga adatoms, are under highly varying strains, ranging from tensile to compressive.

By mapping the observed Mn peak energies onto theoretical energy-strain curves, we can then estimate the expected lattice parameters corresponding to particular energies and compare with the lattice spacing distribution. These results will be discussed as well as the additional discovery of a dependence of the spin anisotropy on the lattice strain.

[1] Yingqiao Ma, Abhijit V. Chinchore, Arthur R. Smith, María Andrea Barral, and Valeria Ferrari, Nano Letters 18, 158 (2018).