AVS 66th International Symposium & Exhibition
    2D Materials Monday Sessions
       Session 2D+AP+EM+MI+NS+PS+TF-MoA

Paper 2D+AP+EM+MI+NS+PS+TF-MoA9
Controlled Growth of Transition Metal Dichalcogenide Monolayers for Applications in Nanoelectronic and Nanophotonic Devices

Monday, October 21, 2019, 4:20 pm, Room A216

Session: 2D Materials Growth and Fabrication
Presenter: Andrey Turchanin, Friedrich Schiller University Jena, Germany
Authors: A. George, Friedrich Schiller University Jena, Germany
C. Neumann, Friedrich Schiller University Jena, Germany
D. Kaiser, Friedrich Schiller University Jena, Germany
R. Mupparapu, Friedrich Schiller University Jena, Germany
U. Hübner, Leibniz Institute of Photonic Technology, Jena, Germany
Z. Tang, Friedrich Schiller University Jena, Germany
A. Winter, Friedrich Schiller University Jena, Germany
I. Staude, Friedrich Schiller University Jena, Germany
A. Turchanin, Friedrich Schiller University Jena, Germany
Correspondent: Click to Email

Controlling the flow rate of precursors is highly essential for the growth of high quality monolayer crystals of transition metal dichalcogenides (TMDs) by chemical vapor deposition. Thus, introduction of an excess quantity of precursors affects the reproducibility of the growth process and results in the multilayer growth. Here, we demonstrate the use of Knudsen-type effusion cells for controlled delivery of sulfur precursor for the large area, high density, size-controlled and highly reproducible growth of monolayer TMD crystals [1]. The size of the grown crystals can be tuned between 10 - 200 µm. We grow MoS2, WS2, MoSe2 and WSe2 monolayer crystals as well as MoSe2-WSe2 lateral heterostructures and characterize them by optical microscopy, atomic force microscopy, Raman spectroscopy, photoluminescence spectroscopy and electrical transport measurements. It has been found that they possess a high crystalline, optical and electrical quality based on their single crystalline nature. We demonstrate their implementation in novel field-effect and nanophotonic devices and discusse an influence of the point defect density on their functional characteristics [2-3]. Moreover, we present a novel synthetic route for the integration of TMDs into lateral heterostructures with other 2D materials [4].

[1] A. George et al., J. Phys.: Mater. 2 (2019) 016001.

[2] T. Bucher et al., ACS Photonics 6 (2019) 1002.

[3] R. Meyer et al., ACS Photonics 6 (2019) DOI: 10.1021/acsphotonics.8b01716

[4] A. Winter et al., Carbon 128 (2018)106.