| AVS 65th International Symposium & Exhibition | |
| Thin Films Division | Wednesday Sessions |
| Session TF+EM+MI-WeA |
| Session: | Thin Film Processes for Electronics and Optics II |
| Presenter: | Yang Liu, University of Southern California |
| Authors: | Y. Liu, University of Southern California S. Niu, University of Southern California T. Orvis, University of Southern California H. Zhang, University of Southern California H. Wang, University of Southern California J. Ravichandran, University of Southern California |
| Correspondent: | Click to Email |
We report the epitaxial growth and the electrical properties, especially the metal-to-insulator transition (MIT) of vanadium dioxide (VO2) thin films synthesized on lanthanum strontium aluminate tantalate (LSAT) (111) substrates by a pulsed laser deposition method. X-ray diffraction study shows that the epitaxial relation between the VO2 thin films and LSAT substrate is given as VO2(020)||LSAT(111) and VO2[001]||LSAT[11-2]. We observed a sharp change of four orders of magnitude in resistance at the MIT temperature of 345K. We measured distinctive Raman spectra below and above the transition point indicating a structural transition between the insulator and metallic phases, as observed in past investigations.