| AVS 65th International Symposium & Exhibition | |
| Thin Films Division | Tuesday Sessions |
| Session TF+AS-TuM |
| Session: | Special Session in Honor of Paul Holloway: Luminescent Materials Growth, Synthesis and Characterization |
| Presenter: | Jay Lewis, Defense Advanced Research Projects Agency |
| Correspondent: | Click to Email |
Most progress in optoelectronic devices has been built upon increasingly perfect materials, where “perfect” implies reducing impurities, point defect, dislocations, and grain boundaries. However the properties of quantum dot devices, such as those demonstrated by the Holloway group, are largely dominated by the surfaces of the nanocrystals. This paper explores the role of nanostructured devices through the lens of DARPA’s Wafer Scale Infrared Detectors (WIRED) program, which seeks to develop infrared detector technology that is inherently disordered. Disorder is a byproduct of the program objective to process detectors directly onto the silicon wafers that are used to process and read out the signals. The program is exploring polycrystalline materials deposited by chemical bath deposition, quantum dot materials deposited by spin or dip coating, as well as traditional III-V compounds deposited at low temperatures compatible with complementary metal oxide semiconductor (CMOS) circuitry. These results are presented in the context of the broader portfolio of DARPA programs seeking to advance the state of the art in imaging and sensing technology.