| AVS 65th International Symposium & Exhibition | |
| Novel Trends in Synchrotron and FEL-Based Analysis Focus Topic | Thursday Sessions |
| Session SA+MI-ThM |
| Session: | Ultra-fast Dynamics for Magnetic and Quantum Systems |
| Presenter: | Anna Regoutz, Imperial College London, UK |
| Authors: | S. Eriksson, Scienta Omicron A. Regoutz, Imperial College London, UK |
| Correspondent: | Click to Email |
During the past decade, increased attention has been shown to hard X-rays in the photoelectron spectroscopy field. This is mainly due to the increased information depth enabled by the higher photon energies. Such bulk sensitive measurements could previously only be performed at dedicated synchrotron radiation facilities. The beam lines providing this type of radiation are heavily booked, so access to the experimental setups is thus limited. Higher excitation energies also enables bulk sensitive measurements of deep core levels not accessible with standard XPS.
Here we present a newproduct featuring a monochromized X-ray source giving out Ga Ka radiation at 9.25keV and a wide acceptance angle hemispherical electron analyzer, both combined on a simple to use vacuum system. The base system can easily be customized by adding separate modules such as a MBE- or preparation chamber or a glove box. With this system, a new set of possible experiments opens up in the home laboratory: investigations of buried interfaces, in operando devices, real world samples, etc.
The X-ray source consists of a MetalJet X-ray tube and the electrons which are accelerated into this jet generate an intense Ga Ka radiation. These X-rays are monochromized using a newly developed monochromator. The small spot size of 20 µm provided by the liquid jet source is maintained throughout the passing of the monochromator and only slightly broadened to about 50µm. In order to allow for easy adjustment of the X-ray focal point relative to the electron analyzer, the entire assembly of monochromator and source can be moved down to a precision of a few micrometers. The hemispherical electron analyzer is configured for high kinetic energies allowing for detection of the full energy range the source provides and a large acceptance angle of +/- 30 degrees. The overall system resolution is shown to be <0.5 eV.
We present data taken from polycrystalline gold and silicon wafers with a surface layer of silicon dioxide with a controlled thickness as well as transistor stacks and energy related materials.