AVS 65th International Symposium & Exhibition
    Novel Trends in Synchrotron and FEL-Based Analysis Focus Topic Wednesday Sessions
       Session SA+AS+MI-WeA

Paper SA+AS+MI-WeA1
Element-resolved Electronic Band Structure of Ga(Mn)As Measured by Standing-wave Hard X-ray Angle-resolved Photoemission

Wednesday, October 24, 2018, 2:20 pm, Room 202A

Session: Hard X-Ray Photoemission for Probing Buried Interfaces
Presenter: Slavomir Nemsak, Advanced Light Source, Lawrence Berkeley National Laboratory
Authors: S. Nemsak, Advanced Light Source, Lawrence Berkeley National Laboratory
M. Gehlmann, University of California, Davis
C.-T. Kuo, University of California, Davis
T.-L. Lee, Diamond Light Source Diamond House, Harwell Science and Innovation Campus
L. Plucinski, Forschungszentrum Juelich GmbH, Germany
J. Minar, University of West Bohemia
C.M. Schneider, Forschungszentrum Juelich GmbH, Germany
C.S. Fadley, University of California, Davis
Correspondent: Click to Email
Electronic band structure of the dilute magnetic semiconductor Ga$_{(1-x)}$Mn$_x$As was obtained using hard X-ray angle-resolved photoemission. The element- and site-sensitivity of the measurements was achieved by forming a strong X-ray standing-wave generated by Bragg reflection from the (111) atomic planes of both undoped GaAs and Mn-doped thin films. Due to the uneven occupancy of (111) planes by either Ga(Mn) or As atoms, the element-specific band structure can be obtained with a help of the SW modulation in core levels. Measured momentum- and element-resolved bulk electronic structure was compared to element-projected Bloch spectral functions with excellent agreement between experiment and theory. Apart from the site specific decomposition of the electronic structure, the SW measurements also confirmed a substitutional presence of Mn atoms at the Ga sites. This novel technique should be applicable to a broad range of complex materials.