| AVS 65th International Symposium & Exhibition | |
| Novel Trends in Synchrotron and FEL-Based Analysis Focus Topic | Thursday Sessions |
| Session SA+AS+HC+SS-ThA |
| Session: | IoT Session: Multi-modal Characterization of Energy Materials & Device Processing |
| Presenter: | Claus Michael Schneider, Forschungszentrum Juelich GmbH, Germany |
| Authors: | C. Baeumer, Forschungszentrum Juelich GmbH, Germany C. Schmitz, Forschungszentrum Juelich GmbH, Germany A. Kindsmüller, RWTH Aachen University, Germany N. Raab, Forschungszentrum Juelich GmbH, Germany V. Feyer, Forschungszentrum Juelich GmbH, Germany D.N. Mueller, Forschungszentrum Juelich GmbH, Germany J. Hackl, Forschungszentrum Juelich GmbH, Germany S. Nemsak, Forschungszentrum Juelich GmbH, Germany O.T. Mentes, Elettra-Sincrotrone Trieste, Italy A. Locatelli, Elettra-Sincrotrone Trieste, Italy R. Waser, Forschungszentrum Juelich GmbH, Germany R. Dittmann, Forschungszentrum Juelich GmbH, Germany C.M. Schneider, Forschungszentrum Juelich GmbH, Germany |
| Correspondent: | Click to Email |
Nonvolatile memories play an increasing role in modern nanoelectronics. Among the various storage concepts, resistive switching promises a high scalability. In oxides, the physical mechanism behind resistive switching involves electrically controlled local redox processes, which result in the formation and migration of oxygen vacancies. We studied these redox processes and their influence on the resistive switching in the model systems SrTiO3(STO) and ZrO2with a full suite of synchrotron-radiation based spectroscopy techniques. The resistive switching in STO proceeds via the growth of nanoscale conductive filaments, which poses considerable challenges to the spectroscopic characterization. Employing nanospectroscopy in an operando configuration we could unanimously relate the conductivity changes between the ON (low resistance) and OFF states (high resistance) to the redox-induced changes of the valencies and the formation of oxygen vacancies [1,2]. The retention time of the ON state in STO is determined by a reoxidation of the previously oxygen-deficient region and can be controlled by inserting an oxygen diffusion barrier. With respect to the reproducibility of the switching process, we find that the individual switching event is governed by a competition within a network of subfilaments, which has been created in the initial forming step. Upon resistive switching, one of these subfilaments becomes the current-carrying filament. However, during repeated switching the different subfilaments may become active, resulting in a cycle-to-cycle variation of the location and shape of the current-carrying filament, which determines the low-resistance state [3].
[1] C. Baeumer, C. Schmitz, A. Marchewka, D. N. Mueller, R. Valenta, J. Hackl, N. Raab, S. P. Rogers, M. I. Khan, S. Nemsak, M. Shim, S. Menzel, C. M. Schneider, R. Waser and R. Dittmann, Nat Commun 7 (2016) 12398.
[2] A. Kindsmüller, C. Schmitz, C. Wiemann, K. Skaja, D. J. Wouters, R. Waser, C. M. Schneider and R. Dittmann, APL Materials 6 (2018) 046106.
[3] C. Baeumer, R. Valenta, C. Schmitz, A. Locatelli, T. O. Mentes, S. P. Rogers, A. Sala, N. Raab, S. Nemsak, M. Shim, C. M. Schneider, S. Menzel, R. Waser and R. Dittmann, ACS Nano 11 (2017) 692.