AVS 65th International Symposium & Exhibition
    Materials and Processes for Quantum Computing Focus Topic Tuesday Sessions
       Session MP+EM+NS-TuM

Invited Paper MP+EM+NS-TuM3
Design and Fabrication for High Coherence Quantum Circuits

Tuesday, October 23, 2018, 8:40 am, Room 203A

Session: High Coherence Qubits for Quantum Computing
Presenter: David Pappas, National Institute of Standards and Technology (NIST)
Authors: D.P. Pappas, National Institute of Standards and Technology (NIST)
X. Wu, National Institute of Standards and Technology (NIST)
R. Lake, National Institute of Standards and Technology (NIST)
M. Bal, National Institute of Standards and Technology (NIST)
J. Long, National Institute of Standards and Technology (NIST)
C.R. McRae, National Institute of Standards and Technology (NIST)
H.S. Ku, National Institute of Standards and Technology (NIST)
Correspondent: Click to Email
In this talk we focus on achieving high coherence in multi-component quantum circuits [1,13]. We will discuss geometric and electrical design strategies that mitigate energy loss while maintaining sufficient coupling to the qubit. Materials considerations -including dielectric losses in the substrate and various interfaces -play a central role in the implementation of these circuits. We will present a summary of our studies of the various participation factors and processing techniques to reduce dielectric loss in the capacitance of the qubits and resonators for readout and coupling. We also review our methods of integration for the key nonlinear component, the overlap tunnel junctions. In particular, techniques for achieving smooth surfaces for the junctions in a back-end process will be shown.

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[13] J. M. Martinis, PRL 95, 210503 (2005).