| AVS 65th International Symposium & Exhibition | |
| Materials and Processes for Quantum Computing Focus Topic | Tuesday Sessions |
| Session MP+EM+NS-TuM |
| Session: | High Coherence Qubits for Quantum Computing |
| Presenter: | Russell Lake, National Institute of Standards and Technology (NIST) |
| Authors: | R. Lake, National Institute of Standards and Technology (NIST) X. Wu, National Institute of Standards and Technology (NIST) and University of Colorado Boulder H.S. Ku, National Institute of Standards and Technology (NIST) and University of Colorado Boulder J. Long, National Institute of Standards and Technology (NIST) and University of Colorado Boulder M. Bal, National Institute of Standards and Technology (NIST) and University of Colorado Boulder C.R. McRae, National Institute of Standards and Technology (NIST) and University of Colorado Boulder D.P. Pappas, National Institute of Standards and Technology (NIST) |
| Correspondent: | Click to Email |
Superconducting tunnel junctions make up the key non-linear circuit component in many implementations of quantum electrical circuits, including superconducting qubits. Therefore, controllable fabrication of superconducting junctions has taken a central role in the realization of quantum computers. In this talk we discuss fabrication and characterization of a wafer-scale process for nanoscale superconducting tunnel junctions (Al-AlOx-Al) [1]. We present the distribution of normal-state resistances across a wafer for different junction sizes. We have applied an analytical method of accounting for the current crowding in the junction leads [2] in order to give accurate predictions of the supercurrent from the room-temperature raw data. These corrected resistances can be input into the Ambegaokar-Baratoff formula to predict the critical current of the tunnel junctions in the superconducting state [3], and the corresponding non-linear effective inductance. These results are immediately relevant to the task of qubit frequency allocation in multi-qubit systems.
[1] Appl. Phys. Lett. 111, 032602 (2017); https://doi.org/10.1063/1.4993937
[2] J. Appl. Phys. 105, 094503 (2009); https://doi.org/10.1063/1.3122503
[3] Phys. Rev. Lett. 10, 486 (1963) and 11, 104 (1963); https://doi.org/10.1103/PhysRevLett.10.486