Invited Paper MI+2D-ThM3
Ferromagnetism in 2D Materials

Thursday, October 25, 2018, 8:40 am, Room 203A

Discovery of graphene has attracted wide interest of research in the family of 2D layered materials including TMDC (transition metal dichalcogenide), silicene, metal oxide and boron nitride. 2D materials have shown many extraordinary properties, such as high carrier mobility, extra-large mechanical strength and high thermal conductivity and excellent performance in energy storages. Due to its two-dimension nature and high carrier mobility, 2D materials are also very promising for spintronics devices. Graphene has shown long spin diffusion length and high spin injection efficiency [1]. Therefore, introducing magnetism into 2D materials becomes one of the research interests in 2D materials. Doping magnetic element into 2D materials is one of the effective methods to achieve magnetism. Most of the research focuses on theoretical calculations. In this presentation, I will introduce both theoretical calculations and experimental results on magnetic element doped 2D materials. From first principles calculations, it shows defects or defect complexes play important role in the magnetism [2]. In addition, ferromagnetism can be tuned by strain [3]. Experimentally, we observe room temperature ferromagnetism in magnetic element doped 2D materials. Especially, giant coercivity and extremely high magnetization have been observed in magnetic element doped MoS₂. Defects and shape anisotropy play critical roles in the high magnetization and coercivity [4,5].

References:

[1] Bruno Dlubak et al. Nature Physics 8, 557 (2012).

[2] Yiren Wang, Sean Li, and Jiabao Yi, Scientific Report, 6, 24153 (2016).

[3] Shuan Li et al. Journal of Physical Chemistry Letters, 8, 1484(2017).

[4] Sohail Ahmed et al. Chemistry of Materials, 29, 9066 (2017)

[5] Sohail Ahmed et al. (to be submitted).