| AVS 65th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Photonics Division Poster Session |
| Presenter: | Nakjun Choi, Sungkyunkwan University, Republic of Korea |
| Authors: | I. Chung, Sungkyunkwan University, Republic of Korea N. Choi, Sungkyunkwan University, Republic of Korea J.H. Bae, Sungkyunkwan University, Republic of Korea |
| Correspondent: | Click to Email |
Thermal oxidized of Ge films under high pressure have been investigated to examine the possibility for the gate oxide. Ge oxides were grown either Ge wafers or Ge epitaxial films grown on Si wafer. The temperature range was from 450 °C to 550 °C, and three different pressures such 10, 30, and 50 atm were chosen for a high pressure dry oxidation. The physical property of GeO2 films were analyzed using the transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy(XPS). Additionally, Au/GeO2/Ge MOS capacitors were characterized using C-V and I-V measurement. The hysteresis behavior in C-V characteristics and the interface trap density (Dit) are significantly reduced through the high pressure oxidation. Consequently, the properties of both GeO2 film and GeO2/Ge interface are successfully improved by suppressing GeO volatilization utilizing high pressure.