| AVS 65th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Photonics Division Poster Session |
| Presenter: | Seth King, University of Wisconsin - La Crosse |
| Correspondent: | Click to Email |
Gallium oxide (Ga2O3) has recently become recently become a material of great interest due as it is a stable, wide bandgap oxide which is capable of being used as a transparent conducting oxide or dielectric layer in the next generation of electronic devices [2]. While the majority of work has focused on single crystal materials, few results exist regarding the growth and nucleation of polycrystalline Ga2O3 materials [2,3].
The present study utilizes spectroscopic ellipsometery, x-ray diffraction, and four-point resistivity measurements to investigate how the physical properties of Ga2O3 thin-films may be altered by changing the partial pressure of O2 during reactive RF sputter deposition. The results will yield important information regarding how material properties are related to deposition conditions using an industrially applicable fabrication process.
[1] “Guest Editorial: The dawn of gallium oxide microelectronics“,
Masataka Higashiwaki and Gregg H. Jessen, Appl. Phys. Lett. 112, 060401 (2018)
[2] “Chemical vapour deposition and characterization of gallium oxide thin films”,
G.A .Battiston, R. Gerbasi, M. Porchia, R. Bertoncello, and F. Caccavale, Thin Solid Films 279, 115-118, (1996)
[3] “Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films”, S.S. Kumar et al., J. Phys. Chem. C, 2013, 117 (8), pp 4194–4200