AVS 65th International Symposium & Exhibition
    Electronic Materials and Photonics Division Thursday Sessions
       Session EM-ThP

Paper EM-ThP14
High-mobility Helical Tellurium Field Effect Transistors Enabled by Transfer-free, Low-temperature Direct Growth

Thursday, October 25, 2018, 6:00 pm, Room Hall B

Session: Electronic Materials and Photonics Division Poster Session
Presenter: Guanyu Zhou, University of Texas at Dallas
Authors: G. Zhou, University of Texas at Dallas
R. Addou, University of Texas at Dallas
Q. Wang, University of Texas at Dallas
S. Honari, University of Texas at Dallas
C.R. Cormier, University of Texas at Dallas
L. Cheng, University of Texas at Dallas
R. Yue, University of Texas at Dallas
C.M. Smyth, University of Texas at Dallas
A. Laturia, University of Texas at Dallas
J. Kim, University of Texas at Dallas
W.G. Vandenberghe, University of Texas at Dallas
M.J. Kim, University of Texas at Dallas
R.M. Wallace, University of Texas at Dallas
C.L. Hinkle, University of Texas at Dallas
Correspondent: Click to Email
The transfer-free direct growth of high performance materials and devices could enable transformative new technologies. Here we report room temperature field-effect hole mobilities as high as 707 cm2V-1s-1, achieved using transfer-free, low-temperature (≤120°C) direct growth of helical tellurium (Te) nanostructure devices on SiO2/Si. The Te nanostructures exhibit significantly higher device performance than other low-temperature grown semiconductors, and we demonstrate that through careful control of the growth process, high-performance Te can be grown on other technologically relevant substrates including flexible plastics like polyethylene terephthalate (PET) and graphene in addition to amorphous oxides like SiO2/Si and HfO2. The morphology of the Te films can be tailored by the growth temperature, and we identify different carrier scattering mechanisms for films with different morphologies. The transfer-free direct growth of high-mobility Te devices could enable major technological breakthroughs, as the low-temperature growth and fabrication is compatible with the severe thermal budget constraints of emerging applications. For example, the vertical integration of novel devices atop a silicon complementary metal oxide semiconductor (CMOS) platform (thermal budget <450 °C) has been theoretically shown to provide a 10x systems level performance improvement, while flexible and wearable electronics (thermal budget <200 °C) could revolutionize defense and medical applications.