| AVS 65th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Photonics Division Poster Session |
| Presenter: | Patrick Carey, University of Florida |
| Authors: | P. Carey, University of Florida F.R. Ren, University of Florida A.G. Baca, Sandia National Laboratories B. Klein, Sandia National Laboratories A.A. Allerman, Sandia National Laboratories A.M. Armstrong, Sandia National Laboratories E.A. Douglas, Sandia National Laboratories R.J. Kaplar, Sandia National Laboratories S.J. Pearton, University of Florida |
| Correspondent: | Click to Email |
Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistors (HEMT) underwent DC characterization across the temperature ranging from room temperature to 500°C. Due to a high Schottky barrier height and low gate leakage current achieved on Al0.85Ga0.15N barrier layer, drain current modulation up to a gate voltage of 10 V was demonstrated at 500°C. The high aluminum content in these devices enables stability at high temperature due to the ultra-wide bandgap of ~ 5.7 eV. Conventional low Al content HEMT devices have previously shown improved elevated temperature operation as compared to their Si or GaAs counterparts, but are unable to operate under extreme temperature tested herein and suffer from high gate leakage current with heating. The drain current on/off ratio of 1011 were obtained with low gate leakage currents. The drain current degraded by ~50% from room temp to 500°C. The subthreshold slope of 80 mV/dec and 230 mV/dec were obtained at room temperature and 500°C, respectively. From the subthreshold slopes, trap densities were calculated to be 2.3 × 1011 cm-2 at room temperature and 3.3 × 1012 cm-2 at 500°C. These novel devices show great promise for application in the power, space, and defense industry where extreme performance is necessary.