| AVS 65th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Thursday Sessions |
| Session EM+MI+MN+NS-ThM |
| Session: | Nanostructures for Electronic and Photonic Devices |
| Presenter: | Michael Filler, Georgia Institute of Technology |
| Authors: | M. Mujica, Georgia Institute of Technology G. Tutuncuoglu, Georgia Institute of Technology V. Breedveld, Georgia Institute of Technology S.H. Behrens, Georgia Institute of Technology M.A. Filler, Georgia Institute of Technology |
| Correspondent: | Click to Email |
Future large-area electronic and photonic technologies will require the manufacturing of materials and devices at very high rates without sacrificing nanoscale control of structure and composition. Semiconductor nanowires, for example, can be produced with exquisite spatial control of composition and morphology using the vapor-liquid-solid (VLS) mechanism that, however, remains limited to very small manufacturing rates. Here, we introduce the Geode process to synthesize functionally-encoded semiconductor nanowires at throughputs orders of magnitude beyond the state-of-the-art. Central to the Geode process are sacrificial, porous-walled, seed particle-lined silica microcapsules, whose interior surface serves as a high-surface area growth substrate. Microcapsules protect the growing nanostructures, are produced with a scalable emulsion templating technique, and are compatible with large-scale chemical reactors. We will show how microcapsule structure and drying is influenced by silica nanoparticle type and concentration, emulsification parameters, and nanoparticle cross-linking agent. We will also demonstrate the synthesis of Si nanowires with programmable dopant profiles on the microcapsule interior, which not only shows the versatility of the process, but also allows the impact of precursor gas transport limitations to be characterized.