AVS 65th International Symposium & Exhibition
    2D Materials Focus Topic Wednesday Sessions
       Session 2D+MN+NS+SS-WeA

Paper 2D+MN+NS+SS-WeA10
Ion Migration Studies in Exfoliated 2D Molybdenum Oxide via Ionic Liquid Gating for Neuromorphic Device Applications

Wednesday, October 24, 2018, 5:20 pm, Room 201B

Session: IoT Session: Surface Chemistry, Functionalization, Bio and Sensor Applications
Presenter: Cheng Zhang, University of Tennessee Knoxville
Authors: C. Zhang, University of Tennessee Knoxville
P.R. Pudasaini, University of Tennessee Knoxville
A.D. Oyedele, University of Tennessee Knoxville
A.V. Ivelev, Oak Ridge National Laboratory
K. Xiao, Oak Ridge National Laboratory
T.Z. Ward, Oak Ridge National Laboratory
D.G. Mandrus, University of Tennessee Knoxville
O.S. Ovchinnikova, Oak Ridge National Laboratory
P.D. Rack, University of Tennessee Knoxville
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The formation of an electric double layer in ionic liquid (IL) can electrostatically induce charge carriers and/or intercalate ions in and out of the lattice which can trigger a large change of the electronic, optical and magnetic properties of materials and even modify the crystal structure. We present a systematic study of ionic liquid gating of exfoliated 2D molybdenum trioxide (MoO3) devices and correlate the resultant electrical properties to the electrochemical doping via ion migration during the IL biasing process. A nearly nine orders of magnitude modulation of the MoO3 conductivity is obtained for the two types of ionic liquids that are investigated. In addition, notably rapid on/off switching was realized through a lithium-containing ionic liquid whereas much slower modulation was induced via oxygen extraction/intercalation. Time-of-Flight Secondary Ion Mass Spectrometry confirms the Li intercalation. Results of short-pulse tests show the potential of these MoO3 devices as neuromorphic computing elements due to their synaptic plasticity.