Invited Paper 2D+EM+MI+NS+TF-MoM3
Crystal Growth of 2D Materials: From Model Systems to Integrated Manufacturing

Monday, October 22, 2018, 9:00 am, Room 201B

In order to serve the industrial demand for “electronic-grade” 2D materials, we focus on chemical vapour deposition (CVD), and in this talk I will review our recent progress in scalable CVD [1] and device integration approaches of highly crystalline graphene, hexagonal boron nitride (h-BN) and transition metal dichalcogenide films. The systematic use of in-situ metrology, ranging from high-pressure XPS to environmental electron microscopy, allows us to reveal some of the key growth mechanisms for these 2D materials that dictate crystal phase, micro-structure, defects, and heterogeneous integration control at industrially relevant conditions [2,3]. I will focus on tailored CVD processes to achieve large monolayer h-BN domains with lateral sizes exceeding 0.5 mm. Importantly we show that depending on the process catalyst as-grown h-BN mono-layers can be easily and cleanly transferred using an entirely exfoliation-based approach.[4] We demonstrate sequential h-BN pick-up, opening a pathway to integrate CVD films in high quality 2D material heterostructures. Progress in growth reached a level where adequate characterisation of such 2D crystal layers over large areas has become a key challenge. Hence we also explore new non-contact characterisation methods [5,6]. We work on applications ranging from magentic tunnel junctions [7] to sensing and single molecule analysis [8,9], and the talk will focus on some of the diverse yet connected integration challenges for CVD 2D films that present a key bottleneck towards reliable scale-up manufacturing and commercialisation.

References

1. Hofmann et al., J. Phys. Chem. Lett. 6, 2714 (2015).

2. Weatherup et al., Nano Lett. 16, 6196 (2016).

3. Caneva et al. Nano Lett. 16, 1250 (2016).

4. Wang et al., in progress (2018).

5. Lin et al., Sci. Rep. 7, 10625 (2017).

6. Feng et al., Nano Lett. 18, 1739 (2018).

7. Piquemal-Banci et al., ACS Nano (2018).

8. Dahmke et al., ACS Nano 11, 11108 (2017).

9. Walker et al., ACS Nano 11, 1340 (2017).