| AVS 65th International Symposium & Exhibition | |
| 2D Materials Focus Topic | Monday Sessions |
| Session 2D+EM+MI+NS+TF-MoM |
| Session: | 2D Materials Growth and Fabrication |
| Presenter: | Kortney Almeida, University of California, Riverside |
| Authors: | K. Almeida, University of California, Riverside M. Wurch, University of California, Riverside G. Stecklein, University of California, Riverside L. Bartels, University of California, Riverside |
| Correspondent: | Click to Email |
Monolayer transition metal dichalcogenide (TMD) films are promising materials in the continuing development of nanoscale devices. Methods to produce wafer-scale monolayer TMD films have included tube-furnace chemical vapor deposition (CVD), liquid-phase exfoliation, and metal-organic CVD. These methods suffer from issues with particulate contamination, pyrophoric precursors, and high cost. Here we demonstrate the growth of homogeneous wafer-scale monolayer molybdenum disulfide (MoS2) using solid inorganic and liquid organic precursors in a high-vacuum environment. These results are achieved using an amorphous SiO2substrate and without any powder or metal-organic precursors. Growth proceeds by the decomposition of carbon disulfide at a hot molybdenum filament, which yields volatile MoSxprecursors that precipitate onto a heated wafer. The continuous and homogeneous single-layer film of MoS2is deposited at wafer scale with a total growth time of fifty minutes. Various thicknesses of the thin films are also demonstrated by the manipulation of the filament power. Optical and electrical characterization indicates performance comparable to or better than MoS2film grown by other wafer-scale growth techniques. Our method provides a scalable process to deposit thin TMD films in a high vacuum environment.