| AVS 65th International Symposium & Exhibition | |
| 2D Materials Focus Topic | Monday Sessions |
| Session 2D+EM+MI+NS+TF-MoM |
| Session: | 2D Materials Growth and Fabrication |
| Presenter: | Leslie Chan, University of California, Berkeley |
| Authors: | L.L. Chan, University of California, Berkeley D.S. Tsai, University of California, Berkeley Z. Wang, University of California, Berkeley C. Carraro, University of California, Berkeley R. Maboudian, University of California, Berkeley |
| Correspondent: | Click to Email |
Chemical vapor deposition (CVD) has emerged as the customary approach for scalable, controllable production of graphene for integrated devices. Standard CVD graphene must be transferred from a generic metal growth substrate onto the desired substrate (e.g., SiO2), but this extra transfer often leads to wrinkles, contamination, and breakage that ultimately result in poor device performance. Several groups have demonstrated metal-catalyzed direct CVD-graphene growth on insulating substrates, but the final graphene products are deficient in quality and uniformity. This work details an expansion of the parameter space that enables lower-defect, higher-uniformity graphene than previously reported using nickel and copper catalysts, respectively. We introduce a mechanism based on carbon permeability that provides deeper insight into the growth process. Ultimately, these studies seek to inform the judicious choice of process parameters that will lead to large-area, high-quality, layer-controlled graphene directly on target substrates.