AVS 65th International Symposium & Exhibition
    2D Materials Focus Topic Thursday Sessions
       Session 2D+EM+MI+MN+NS+SS-ThM

Paper 2D+EM+MI+MN+NS+SS-ThM5
Few-Layer Rhenium Disulfide Synthesized Via Chemical Vapor Deposition

Thursday, October 25, 2018, 9:20 am, Room 201B

Session: Novel 2D Materials
Presenter: Michael Valentin, Army Research Laboratory
Authors: M.D. Valentin, Army Research Laboratory
A. Guan, University of California, Riverside
A.E. Nguyen, University of California, Riverside
I. Lu, University of California, Riverside
C.S. Merida, University of California, Riverside
M.J. Gomez, University of California, Riverside
R.A. Burke, Army Research Laboratory
M. Dubey, Army Research Laboratory
L. Bartels, University of California, Riverside
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Transition metal dichalcogenides (TMDs) are exciting new materials that have received much attention due to their semiconducting properties in the direct bandgap. Well-studied TMDs, such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2), exhibit a direct bandgap in the monolayer form, but an indirect bandgap in the bulk form. Rhenium disulfide (ReS2), on the other hand, is a new TMD that is unique in its ability to retain a direct bandgap independent of thickness. By using chemical vapor deposition (CVD), few-layer ReS2 is synthesized and characterized by optical methods such as Raman spectroscopy and photoluminescence. We also show characterization results for atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), transmission electron microscope (TEM), and electrical transport to determine thickness, crystallinity, homogeneity, and electrical characteristics for use in future flexible electronics.