AVS 65th International Symposium & Exhibition
    2D Materials Focus Topic Wednesday Sessions
       Session 2D+AM+EM+NS-WeM

Paper 2D+AM+EM+NS-WeM12
Magnetic Doping in 2D MBE-grown-MoSe2/graphene Heterostructures Studied by Photoelectron Spectroscopy and Band Structure Imaging

Wednesday, October 24, 2018, 11:40 am, Room 201B

Session: Dopants, Defects, and Interfaces in 2D Materials
Presenter: Maxime Gay, CEA-LETI, France
Authors: M. Gay, CEA-LETI, France
O.J. Renault, CEA-LETI, France
MT. Dau, CEA-INAC-SPINTEC, France
C. Vergnaud, CEA-INAC-SPINTEC, France
M. Jamet, CEA-INAC-SPINTEC, France
Correspondent: Click to Email
2D TMDCs present a unique combination of electronic and mechanical properties such as a direct bandgap, strong spin-orbit coupling and K-valley inequivalence, with an atomic-scale thickness [1]. Introducing magnetic phases into these materials opens exciting perspectives towards spin control in magnetic tunnel junctions. To date, magnetism in 2D systems was mostly studied by theoretical calculations. Within the diluted magnetic semiconductors model, transition metal atoms from the monolayer are substituted by a few Mn, Fe or Co atoms [2-4].

Our study focuses on Mn-doped-MoSe2 monolayers, grown by molecular beam epitaxy on graphene, and characterized by photoemission techniques (XPS, kPEEM) coupled with observations at different scales (DRX, TEM). Before doping, we found that the in-plane lattices of graphene and MoSe2 are aligned with each other and that a bandgap opens in the graphene around the Fermi level [5-6]. After Mn doping, the obtained Mn insertion is measured up to 15% by XPS. The influence of Mn doping on the band structure of MoSe2/graphene heterostructure will be presented and discussed.

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REFERENCES

[1] Manzeli, S., et al. Nat. Rev. Mater. 2, 17033 (2017).

[2] Mishra, R., et al. Phys. Rev. B - Condens. Matter Mater. Phys. 88, 1–5 (2013).

[3] Zhang, K., et al. Nano Lett. 15, 6586–6591 (2015).

[4] Singh, N. & Schwingenschlögl, U. ACS Appl. Mater. Interfaces 8, 23886–23890 (2016).

[5] Dau, M. T., et al. Appl. Phys. Lett. 110, 11909 (2017).

[6] Dau, M. T., et al. ACS Nano 12, 3, 2319-2331 (2018).