AVS 65th International Symposium & Exhibition | |
2D Materials Focus Topic | Wednesday Sessions |
Session 2D+AM+EM+NS-WeM |
Session: | Dopants, Defects, and Interfaces in 2D Materials |
Presenter: | Maxim Ziatdinov, Oak Ridge National Laboratory |
Authors: | M. Ziatdinov, Oak Ridge National Laboratory S.V. Kalinin, Oak Ridge National Laboratory |
Correspondent: | Click to Email |
Understanding fundamental atomic-scale mechanisms behind solid state reactions and phase transformations is critical for optimizing functional properties of technologically relevant materials. Recent advances in scanning transmission electron microscopy (STEM) have allowed to visualize dynamic processes in solid state systems, induced by thermal or chemical stimuli or electron beam, on the level of individual atoms and single atomic defects. However, while there have been multiple STEM studies on materials structure evolution, the materials-specific knowledge on the kinetics and thermodynamics of these processes and atomic potentials is almost non-existent, which is mainly due to the inherent limitations of the current (semi-)manual image analysis techniques. Here we demonstrate an approach based on deep convolutional neural networks for automated analysis of dynamic STEM data from 2-dimensional materials, such as monolayer WS2, under e-beam irradiation. Our approach allows to create a library of atomic defects, explore subtle atomic distortions around the defects of interest and map chemical transformation pathways on the atomic level. We specifically show how the developed framework can be used for extracting diffusion parameters of sulfur vacancies in WS2 and for studying transformation pathways for Mo-S complexes, including detailed transition probabilities.