AVS 64th International Symposium & Exhibition
    Thin Films Division Tuesday Sessions
       Session TF-TuA

Invited Paper TF-TuA9
Area Selective Atomic Layer Deposition Via Precursor Selective Adsorption: Theory, Strategy, and Applications in Catalysis

Tuesday, October 31, 2017, 5:00 pm, Room 20

Session: ALD Precursors and Surface Reactions
Presenter: Rong Chen, Huazhong University of Science and Technology, PR China
Correspondent: Click to Email
Atomic layer deposition (ALD) is a powerful thin film deposition method with precise thickness control, good uniformity, and high conformality on entire surface. While in catalysis applications, there are increasing interests for synthesis of catalysts with well-defined nanostructures, thus ALD has become a desired method for catalyst synthesis with precise control of size, composition, nanostructure, etc. Herein we report the area selective growth strategies via ALD precursor selective adsorption to obtain desired metal-oxide composite catalysts. Combining in-situ QCM, FTIR and DFT calculations, a series of oxide ALD precursors with -(CH3)n -(N(CH3)2)n, -(Cp)n, and –(thd)n ligands are studied on their chemisorption and binding energies to metal surfaces. The selective growth behavior shows a strong correlation with different precursor ligands as well as the counter reactants. Thus with optimal precursor choice and reaction condition, desired nanocomposite structures could be achieved via area selective ALD.