| AVS 63rd International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF2-ThM |
| Session: | Area-selective Deposition and Sequential Infiltration Synthesis |
| Presenter: | Mark Losego, Georgia Institute of Technology |
| Authors: | M.D. Losego, Georgia Institute of Technology J-P. Maria, North Carolina State University E.A. Paisley, Sandia National Laboratories |
| Correspondent: | Click to Email |
Selective area growth of thin films reduces the number of steps in microfabrication processing and enables novel device structures. Here we report for the first time selective area epitaxy of an oxide material on a GaN surface. Chlorination of the GaN surface via wet chemical processing is found effective to disrupt Mg adsorption and selectively prevent molecular beam epitaxy (MBE) growth of MgO. MgO films grown on neighboring, non-chlorinated surfaces are epitaxial with a (111) MgO || (0001) GaN crystallographic relationship. In-situ XPS studies reveal that a surface monolayer of adsorbed chlorine acts to prevent MgO deposition. Better than 3 micron lateral resolution for the selective area growth of MgO on GaN is demonstrated. This talk will present our current understanding of this selective growth process and detail our studies of the surface chemistry mechanisms.