AVS 63rd International Symposium & Exhibition
    Thin Film Tuesday Sessions
       Session TF+SA+MI-TuM

Paper TF+SA+MI-TuM10
Probing CVD Growth Mechanisms of SiC with In Operando Synchrotron-based X-ray Diagnostics

Tuesday, November 8, 2016, 11:00 am, Room 102B

Session: Thin Films for Synchrotron and Magnetism Applications
Presenter: Philip DePond, Lawrence Livermore National Laboratory
Authors: P. DePond, Lawrence Livermore National Laboratory
A.A. Martin, Lawrence Livermore National Laboratory
J.H. Yoo, Lawrence Livermore National Laboratory
M. Bagge-Hansen, Lawrence Livermore National Laboratory
J. Lee, Lawrence Livermore National Laboratory
S. Elhadj, Lawrence Livermore National Laboratory
M. Matthews, Lawrence Livermore National Laboratory
T. van Buuren, Lawrence Livermore National Laboratory
Correspondent: Click to Email
Laser chemical vapor deposition (LCVD) of ultra-hard coatings, such as SiC, offers sub-mm spatial control over composition and phase, while addressing multiple growth processes under the same conditions for comparison. Normally, optimization requires extensive and costly “cook and look” experiments. Using an in situ approach instead, we develop fundamental insights into the growth mechanisms to unravel the complex roles of deposition parameters. We have conducted a series of in operando synchrotron-based X-ray absorption experiments that interrogate the LCVD growth region during growth. SiC was grown in a compact, portable CVD system from tetramethylsilane using a CW 532nm YAG to achieve laser-based pyrolytic precursor decomposition. We will present the results of Si K-edge (1.8keV) X-ray absorption near-edge structure (XANES) measurements conducted concurrently for the film during LCVD growth with an emphasis on the effects of variation of temperature, flow, substrates, and pressure conditions.