AVS 63rd International Symposium & Exhibition
    Thin Film Tuesday Sessions
       Session TF+SA+MI-TuM

Paper TF+SA+MI-TuM1
Achieving High-Temperature Ferromagnetic Topological Insulator by Proximity Coupling

Tuesday, November 8, 2016, 8:00 am, Room 102B

Session: Thin Films for Synchrotron and Magnetism Applications
Presenter: Valeria Lauter, Oak Ridge National Laboratory
Correspondent: Click to Email

Topological insulators (TIs) are insulating materials that poses conducting surface states protected by time-reversal symmetry, wherein electron spins are locked to their momentum. This exclusive property offers novel prospects for creating next-generation electronic and spintronic devices, including TI-based quantum computation. Introducing ferromagnetic order into a TI system without compromising its distinctive quantum coherent properties could lead to a realization of a number of innovative physical phenomena. In particular, achieving robust long-range magnetic order at the TI surface at specific locations without introducing spin scattering centers could open up new potentials for devices. Here, we demonstrate topologically enhanced interface magnetism by coupling a ferromagnetic insulator (FMI) to a TI (Bi2Se3); this interfacial ferromagnetism persists up to room temperature, even though the FMI (EuS) is known to order ferromagnetically only at low temperatures (< 17 K). The induced magnetism at the interface resulting from the large spin-orbit interaction and spin-momentum locking property of the TI surface is found to greatly enhance the magnetic ordering (Curie) temperature of the TI/FMI bilayer system. Due to the short range nature of the ferromagnetic exchange interaction, the time-reversal symmetry is broken only near the surface of a TI, while leaving its bulk states unaffected [1]. The topological magneto-electric response originating in such an engineered TI could allow for an efficient manipulation of the magnetization dynamics by an electric field, providing an energy efficient topological control mechanism for future spin-based technologies. Work supported by U.S. DOE, Office of Science, BES.

[1]F. Katmis, V. Lauter, F. Nogueira, B. Assaf, M. Jamer, P. Wei, B. Satpati, J. Freeland, I. Eremi5, D. Heiman, P. Jarillo-Herrero, J. Moodera, “Achieving high-temperature ferromagnetic topological insulating phase by proximity coupling”, Nature 2016